发布者:正大伟业 | 浏览次数：341 | 发布日期：2018-06-29 09:48:53
On Semi公司的CP51705是单路6A高速低边SiC MOSFET驱动器,源电流和沉电流6A,为了获得最低的导通损耗,驱动器能对SiC MOSFET提供最大限度的栅极电压,主要用在驱动SiC MOSFET器件,工业逆变器,马达驱动器以及PFC,AC/DC转换器和DC/DC转换器.本文介绍了CP51705主要特性,框图和应用电路,以及评估板EVBUM2528/D,电路图,材料清单和PCB设计图.
The NCP51705 driver is designed to primarily drive SiC MOSFETtransistors. To achieve the lowest possible conduction losses, thedriver is capable to deliver the maximum allowable gate voltage to theSiC MOSFET device. By providing high peak current during turn−onand turn−off, switching losses are also minimized. For improvedreliability, dV／dt immunity and even faster turn−off, the NCP51705can utilize its on−board charge pump to generate a user selectablenegative voltage rail.
For full compatibility and to minimize the complexity of the biassolution in isolated gate drive applications the NCP51705 alsoprovides an externally accessible 5 V rail to power the secondary sideof digital or high speed opto isolators.
The NCP51705 offers important protection functions such asunder−voltage lockout monitoring for the bias power and thermalshutdown based on the junction temperature of the driver circuit.
• High Peak Output Current with Split Output Stages to allowindependent Turn−ON／Turn−OFF Adjustment;
♦ Source Capability: 6 A
♦ Sink Capability: 6 A
• Extended Positive Voltage Rating for Efficient SiC MOSFETOperation during the Conduction Period
• User−adjustable Built−in Negative Charge Pump for Fast Turn−offand Robust dV／dt Immunity
• Accessible 5 V Reference ／ Bias Rail for Digital Oscillator Supply
• Adjustable Under−Voltage Lockout
• Desaturation Function
• Thermal Shutdown Function (TSD)
• Small & Low Parasitic Inductance QFN24 Package
• Driving SiC MOSFET
• Industrial Inverters, Motor Drivers
• PFC, AC to DC and DC to DC Converters
This document describes the use and applications for theNCP51705 SiC driver mini EVB. The EVB is designed ona four layer PCB and includes the NCP51705 driver and allthe necessary drive circuitry. The EVB also includes anon−board digital isolator and the ability to solder anyMOSFET or SiC MOSFET in a T0247 high voltagepackage. The EVB does not include a power stage and isgeneric from the point of view that it is not dedicated to anyparticular topology. It can be used in any low−side orhigh−side power switching application. For bridgeconfigurations two or more of these EVBs can be configuredin a totem pole type drive configuration. The EVB can beconsidered as an isolator+driver+T0247 discrete module.
图6.评估板EVBUM2528／D(35 mm x 15 mm x 5 mm)外形图